D2012 Datasheet | Specifications & PDF Download

® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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www.DataSheet4U.com

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WNSC2D201200W-A Silicon Carbide Diode Rev.01 - 09 September 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO247

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Product Summary VRRM 1200
V IF (TC=150°C) 20 A** QC 110 nC** Features  Extremely low reverse current  No reverse recovery current  Temperatur

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CBD20120LCT LOW VF SCHOTTKY RECTIFIER VOLTAGE FEATURES • Low forward voltage drop, low power losses • High efficiency operation • In compliance with E

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Product Summary VRRM 1200
V IF (TC=160°C) QC 20 A 120 nC Features  Extremely low reverse current  No reverse recovery current  Temperature inde

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KSD2012 KSD2012 Low Frequency Power Amplifier • Complement to KSB1366 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Abs

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® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

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NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier KSD2012 • Complementary to KSB1366 • This is a Pb−Free Device ABSOLUTE MAXIMUM RATING

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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isc Silicon NPN Power Transistor KSD2012 DESCRIPTION ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Voltage- : VCE(sat)= 1.0V (Ma

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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WNSC2D201200 Silicon Carbide Diode Rev.01 - 21 June 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220-2L plas

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WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.910@ VGS=-1.8V Descriptions

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

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www.DataSheet4U.com

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

(15 views)