D2012 Datasheet | Specifications & PDF Download

® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

(116 views)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

(74 views)

ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D20120D Silicon Carbide Schottky Barrier Diode Features Applications  1200-Vol t Schottky Re

(65 views)

Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

(41 views)

C4D20120D 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky

(35 views)

® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

(34 views)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2012 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·Complem

(34 views)

Product Summary VRRM 1200
V IF (TC=150°C) 20 A** QC 110 nC** Features  Extremely low reverse current  No reverse recovery current  Temperatur

(34 views)

Product Summary VRRM 1200
V IF (TC=160°C) QC 20 A 120 nC Features  Extremely low reverse current  No reverse recovery current  Temperature inde

(33 views)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

(32 views)

KSD2012 KSD2012 Low Frequency Power Amplifier • Complement to KSB1366 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Abs

(32 views)

ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2012L ND2020L V(BR)DSV Min (V) 200 rDS(on) Max (W) 12 20 VG

(32 views)

CBD20120LCT LOW VF SCHOTTKY RECTIFIER VOLTAGE FEATURES • Low forward voltage drop, low power losses • High efficiency operation • In compliance with E

(32 views)

NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier KSD2012 • Complementary to KSB1366 • This is a Pb−Free Device ABSOLUTE MAXIMUM RATING

(32 views)

E4D20120G Silicon Carbide Schottky Diode E-Series Automotive Features Package • 4th Generation SiC Merged PIN Schottky Technology • Ze

(32 views)

ND2012 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (n.) (A) PACKAGE ND2012L 200 12 0.1

(31 views)

www.DataSheet4U.com

(31 views)

WNSC2D201200W-A Silicon Carbide Diode Rev.01 - 09 September 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO247

(31 views)

www.DataSheet4U.com C2D20120–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • • • • • • VRRM = 1200 V IF = 20 A Qc =122 nC

(29 views)

Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

(29 views)