D2012 Datasheet | Specifications & PDF Download

® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

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APTD2012LZGCK 2.0 x 1.25 mm SMD Chip LED Lamp DESCRIPTIONS  The Green source color devices are made with InGaN on Sapphire Light Emitting Diode  Ele

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2012 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·Complem

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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WNSC2D201200-A Silicon Carbide Diode Rev.01 - 16 October 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220-2L

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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WNSC2D201200W-A Silicon Carbide Diode Rev.01 - 09 September 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO247

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WNSC2D201200 Silicon Carbide Diode Rev.01 - 21 June 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220-2L plas

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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WNSC2D201200CW-A Silicon Carbide Diode Rev.01 - 09 September 2024 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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Product Summary VRRM 1200
V IF (TC=160°C) QC 20 A 120 nC Features  Extremely low reverse current  No reverse recovery current  Temperature inde

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® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy

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ND2012 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (n.) (A) PACKAGE ND2012L 200 12 0.1

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