® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH .
STMicroelectronics
D2012 - NPN Silicon Power Transistor
® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL.
Toshiba Semiconductor
D2012 - 2SD2012
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: .
Kingbright
APTD2012LZGCK - SMD Chip LED Lamp
APTD2012LZGCK 2.0 x 1.25 mm SMD Chip LED Lamp DESCRIPTIONS The Green source color devices are made with InGaN on Sapphire Light Emitting Diode Ele.
SavantIC
2SD2012 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2012 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·Complem.
GOTREND
GBD201209PGH300N - Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy .
WillSEMI
WPMD2012 - MOSFET
WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.910@ VGS=-1.8V Descriptions.
Chilisin Electronics
MHCD201210A - Molding Power Choke
Molding Power Choke – MHCD Series MHCD Series Features Monolithic, magnetically shielded Compact high saturation current Minimum height=1.0mm M.
Toshiba Semiconductor
2SD2012 - NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: .
STMicroelectronics
2SD2012 - NPN Silicon Power Transistor
® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL.
CREE
C2D20120 - Silicon Carbide Schottky Diode
www.DataSheet4U.com C2D20120–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • • • • • • VRRM = 1200 V IF = 20 A Qc =122 nC .
GOTREND
GBD201209PGH151N - Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy .
GOTREND
GBD201209PGH121N - Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy .
GOTREND
GBD201209PGH101N - Multilayer Ferrite Chip Bead
Product Series Code File Version Established Date Latest Edit Date GBD GBD-V3R2 2009.07.24 2010.09.28 Brand Editor Description Pages GOTREND Teddy .
MCC
2SD2012 - NPN Silicon Power Transistors
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"#.
ELAN Microelectronics
EPD2012 - RISC II Series Microcontroller
EPD2012 RISC II Series Microcontroller Product Specification DOC. VERSION 0.2 ELAN MICROELECTRONICS CORP. October 2009 Trademark Acknowledgments: IBM.
Wolfspeed
E4D20120A - 20A Silicon Carbide Schottky Diode
E4D20120A E-Series Automotive 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Car.
BASiC Semiconductor
B2D20120H1 - SiC Schottky Diode
Product Summary VRRM 1200V IF (TC=160°C) QC 20 A 120 nC Features Extremely low reverse current No reverse recovery current Temperature inde.
CREE
C4D20120H - Silicon Carbide Schottky Diode
C4D20120H Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency .
Sanyo Semicon Device
FTD2012 - N- Channel Silicon MOS FET Load S/W USE
FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enab.
Siliconix
ND2012E - N-Channel Depletion-Mode MOS Transistors
ND2012 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (n.) (A) PACKAGE ND2012L 200 12 0.1.
