GT10Q101 is Silicon N-Channel IGBT manufactured by Toshiba .
| Part Number | Description |
|---|---|
| GT10Q301 | Silicon N-Channel IGBT |
| GT10Q311 | Silicon N-Channel IGBT |
| GT10G131 | Silicon N-Channel IGBT |
| GT10J301 | Silicon N-Channel IGBT |
| GT10J303 | Silicon N-Channel IGBT |
GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage:.
