GT5G131 Description
GT5G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G131 Strobe Flash Applications Unit: mm 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in pact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current:.