K13A60D Description
TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current:.