TK55D10J1 Description
TK55D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK55D10J1 Switching Regulator Applications High-Speed switching Low gate charge: Qg = 110 nC (typ.) Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.) High forward transfer admittance:.