TK50F15J1
TK50F15J1 is MOSFETs manufactured by Toshiba.
Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
3. Packaging and Internal Circuit
1: Gate 2: Drain (Heatsink) 3: Source
TO-220SM(W)
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating 150 ±20 50 150 300 273 35 175 -55 to 175 W m J A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2011-09-09 Rev.1.0
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Symbol Rth(ch-c) Max 0.5 Unit /W
Note 1: Ensure that the channel temperature does not exceed 175. Note 2: VDD = 50 V, Tch = 25 (initial), L = 33 µH, RG = 25 Ω, IAR = 35 A Note 3: The definitions of the absolute maximum channel and storage temperatures are based on AEC-Q101.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2011-09-09 Rev.1.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics Gate leakage current Drain...
