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MOSFETs Silicon N-Channel MOS (U-MOS-H)
TK50P03M1
1. Applications
• Switching Voltage Regulators • Motor Drivers • Power Management Switches
2. Features
(1) High-speed switching (2) Low gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TK50P03M1
DPAK
1: Gate 2: Drain (heatsink) 3: Source
©2016-2019 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2009-02
2019-04-19 Rev.5.0
TK50P03M1
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