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TK50P03M1 - Silicon N-Channel MOSFET

Key Features

  • (1) High-speed switching (2) Low gate charge: QSW = 8.2 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK50P03M1 DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2009-02 2019-04-19 Rev.5.0 TK50P03M1 4. Absolute.

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Datasheet Details

Part number TK50P03M1
Manufacturer Toshiba
File Size 304.02 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK50P03M1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (U-MOS-H) TK50P03M1 1. Applications • Switching Voltage Regulators • Motor Drivers • Power Management Switches 2. Features (1) High-speed switching (2) Low gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK50P03M1 DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2009-02 2019-04-19 Rev.5.0 TK50P03M1 4.