TK50P04M1
TK50P04M1 is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) High-speed switching (2) Low gate charge: QSW = 9.4 n C (typ.) (3) Low drain-source on-resistance: RDS(ON) = 6.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 m A)
3. Packaging and Internal Circuit
DPAK
1: Gate 2: Drain (heatsink) 3: Source
©2016 Toshiba Corporation
Start of mercial production
2009-02
2016-02-17 Rev.5.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1)
Power dissipation
(Tc = 25)
Single-pulse avalanche energy
(Note 2)
65 m J
Single-pulse avalanche current
Channel temperature
Tch
...
