TPC8202 Description
TPC8202 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) TPC8202 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l 2.5-V Gate drive l Small footprint due to small and thin package l Low drain−source ON resistance l Low leakage current l Enhancement−mode : RDS (ON) = 41 mΩ (typ.) l High forward transfer admittance : IDSS = 10 µA (max) (VDS = 20 V).
TPC8202 Key Features
- 2.5-V Gate drive
- Small footprint due to small and thin package
- Low drain−source ON resistance
- Low leakage current
- Enhancement−mode : RDS (ON) = 41 mΩ (typ.)
- High forward transfer admittance : |Yfs| = 9 S (typ.) : IDSS = 10 µA (max) (VDS = 20 V) : Vth = 0.5~1.1 V (VDS