TP65H150LSG - 650V GaN FET

Product Overview

Datasheet Details

Part number	TP65H150LSG
Manufacturer	Transphorm
File Size	0.96 MB
Description	650V GaN FET
Datasheet	TP65H150LSG Datasheet
Additional preview pages of the TP65H150LSG datasheet.

Product details

Description

The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. offering superior reliability and performance. AN0009: Recommended External Circuitry for GaN FETs AN0003: Printed Circuit Board Layout and Prob

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS.

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Published: Apr 29, 2019 |