TP65H150LSG - 650V GaN FET

General Description

The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.

offering superior reliability and performance.

Key Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS.

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TP65H150LSG 650v gan fet by Transphorm - Datasheet Preview

Datasheet Details

Part number	TP65H150LSG
Manufacturer	Transphorm
File Size	0.96 MB
Description	650V GaN FET
Datasheet	TP65H150LSG Datasheet

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Full PDF Text Transcription (Reference)

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TP65H150LSG 650V GaN FET PQFN Series Preliminary Description The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.