TP65H150BG4JSG
TP65H150BG4JSG is 650V GaN FET manufactured by Renesas.
Specifications in this document are tentative and subject to change
650V Super Ga N® Ga N FET in PQFN (source tab)
Description
The TP65H150BG4JSG 650V, 150mΩ Gallium Nitride (Ga N) FET is a normally-off device using Renesas’s Gen IV platform. It bines a state-ofthe-art high voltage Ga N HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Related Literature
- Printed Circuit Board Layout and Probing
- Remendations for Vapor Phase Reflow
- Remended External Circuitry for Ga N FETs
- PQFN Tape and Reel Information
Product Series and Ordering Information
Part Number TP65H150BG4JSG-TR
Package 5x6 PQFN
Package Configuration
Source
- “-TR” suffix refers to tape and reel. Refer to AN0012 for details. TP65H150BG4JSG PQFN (bottom view)
Pin 5
Pin 8
Pin 4 s Pin 9 Pin 1
KS S
Cascode Schematic Symbol
Cascode Device Structure
Features
- Gen IV technology
- JEDEC-qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low...
