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TP65H150BG4JSG - 650V GaN FET

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Renesas

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TP65H150BG4JSG 650V GaN FET by Renesas - Datasheet Preview — Datasheet preview – TP65H150BG4JSG

Datasheet Details

Part number	TP65H150BG4JSG
Manufacturer	Renesas
File Size	826.98 KB
Description	650V GaN FET
Datasheet	TP65H150BG4JSG Datasheet
Additional preview pages of the TP65H150BG4JSG datasheet.

TP65H150BG4JSG Product details

Description

The TP65H150BG4JSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

It combines a state-ofthe-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Increased power density.
Reduced system size and weight.
Overall lower syste.

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Published: Feb 7, 2025 |