TP65H150G4LSG
TP65H150G4LSG is 650V GaN FET manufactured by Renesas.
Specifications in this document are tentative and subject to change
650V Super Ga N® Ga N FET in PQFN (source tab)
Description
The TP65H150G4LSG 650V, 150mΩ Gallium Nitride (Ga N) FET is a normally-off device. It bines state-of-the-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance.
The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Related Literature
- Printed Circuit Board Layout and Probing
- Remendations for Vapor Phase Reflow
- Remended External Circuitry for Ga N FETs
- PQFN Tape and Reel Information
Product Series and Ordering Information
Part Number TP65H150G4LSG-TR-
Package 8x8 PQFN
Package Configuration
Source
- “-TR” suffix refers to tape and reel. Refer to AN0012 for details.
TP65H150G4LSG PQFN
(Bottom view)
Features
- Gen IV technology
- JEDEC-qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- Ro HS pliant and Halogen-free packaging
Benefits
- Achieves increased efficiency in both hard- and soft-switched...
