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TP65H150G4PS - 650V GaN FET

General Description

(GaN) FET is a normally-off device.

superior reliability and performance.

Key Features

  • Gen IV technology.
  • JEDEC-qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging Benefits.
  • Achieves increased efficiency in both hard- and soft-switched circuits.
  • Recommended External Circuitry for GaN FETs.
  • Low cost driver solution.
  • Inc.

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Other Datasheets by Renesas

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TP65H150G4LSG 650V GaN FET
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TP65H150BG4JSG 650V GaN FET
TP65H100G4LSGB 650V SuperGaN GaN FET
TP65H100G4PS 650V SuperGaN GaN FET
TP65H030G4PQS 650V GaN FET
TP65H030G4PRS 650V GaN FET
TP65H030G4PWS 650V GaN FET
TP65H035G4QS 650V SuperGaN FET
TP65H035G4WS 650V FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Specifications in this document are tentative and subject to change Datasheet TP65H150G4PS 650V SuperGaN® GaN FET in TO-220 (source tab) )Description Preliminary Datasheet The TP65H150G4PS 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.