TP65H150G4PS Datasheet | Renesas

Specifications in this document are tentative and subject to change 650V Super Ga N® Ga N FET in TO-220 (source tab) )Description Preliminary Datasheet The TP65H150G4PS 650V, 150mΩ Gallium Nitride (Ga N) FET is a normally-off device. It bines state-of-the-art high voltage Ga N HEMT and low voltage silicon MOSFET technologies- offering superior reliability and performance. The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. Related Literature - Printed Circuit Board Layout and Probing - Remendations for Vapor Phase Reflow Features - Gen IV technology - JEDEC-qualified Ga N technology - Dynamic RDS(on)eff production tested - Robust design, defined by - Wide gate safety margin - Transient over-voltage capability - Very low QRR - Reduced crossover loss - Ro HS pliant and Halogen-free packaging Benefits - Achieves increased efficiency in both hard- and soft-switched circuits - Remended External Circuitry for Ga N FETs - Low cost driver solution - Increased power density - Reduced system size and weight - Overall lower system cost Product Series and Ordering Information Part...