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TGA2214 Datasheet 2 To 18 Ghz 5w Gan Power Amplifier

Manufacturer: TriQuint Semiconductor

Overview: Applications  Test Equipment  Electronic Warfare  Military Radar TGA2214 2 to 18 GHz 5W GaN Power Amplifier.

Datasheet Details

Part number TGA2214
Manufacturer TriQuint Semiconductor
File Size 418.15 KB
Description 2 to 18 GHz 5W GaN Power Amplifier
Datasheet TGA2214-TriQuintSemiconductor.pdf

General Description

TriQuint’s TGA2214 is a wideband power amplifier fabricated on TriQuint’s TQGaN15 GaN on SiC process.

The TGA2214 operates from 2 – 18 GHz and achieves 5 W of saturated output power with 14 dB of large signal gain and greater than 20% power-added efficiency .

This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost.

Key Features

  • Frequency Range: 2 - 18 GHz.
  • Pout: > 37 dBm at PIN = 23 dBm.
  • PAE: > 20 % at Pin = 23 dBm.
  • Large Signal Gain (Pin = 23 dBm): > 14 dB.
  • Small Signal Gain: > 22 dB.
  • Return Loss: > 7 dB.
  • Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V Typical.
  • Chip Dimensions: 3 x 5 x 0.10 mm.
  • Performance under CW operation Functional Block Diagram 23 1 65 4 General.

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