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TGA2214 - 2 to 18 GHz 5W GaN Power Amplifier

General Description

TriQuint’s TGA2214 is a wideband power amplifier fabricated on TriQuint’s TQGaN15 GaN on SiC process.

18 GHz and achieves 5 W of saturated output power with 14 dB of large signal gain and greater than 20% power-added efficiency .

Key Features

  • Frequency Range: 2 - 18 GHz.
  • Pout: > 37 dBm at PIN = 23 dBm.
  • PAE: > 20 % at Pin = 23 dBm.
  • Large Signal Gain (Pin = 23 dBm): > 14 dB.
  • Small Signal Gain: > 22 dB.
  • Return Loss: > 7 dB.
  • Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V Typical.
  • Chip Dimensions: 3 x 5 x 0.10 mm.
  • Performance under CW operation Functional Block Diagram 23 1 65 4 General.

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Datasheet Details

Part number TGA2214
Manufacturer TriQuint Semiconductor
File Size 418.15 KB
Description 2 to 18 GHz 5W GaN Power Amplifier
Datasheet download datasheet TGA2214 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Test Equipment  Electronic Warfare  Military Radar TGA2214 2 to 18 GHz 5W GaN Power Amplifier Product Features  Frequency Range: 2 - 18 GHz  Pout: > 37 dBm at PIN = 23 dBm  PAE: > 20 % at Pin = 23 dBm  Large Signal Gain (Pin = 23 dBm): > 14 dB  Small Signal Gain: > 22 dB  Return Loss: > 7 dB  Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V Typical  Chip Dimensions: 3 x 5 x 0.10 mm  Performance under CW operation Functional Block Diagram 23 1 65 4 General Description TriQuint’s TGA2214 is a wideband power amplifier fabricated on TriQuint’s TQGaN15 GaN on SiC process. The TGA2214 operates from 2 – 18 GHz and achieves 5 W of saturated output power with 14 dB of large signal gain and greater than 20% power-added efficiency .