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TGA2216-SM Datasheet 10w Gan Power Amplifier

Manufacturer: TriQuint Semiconductor

Overview: Applications  Commercial and military radar  Communications  Electronic Warfare TGA2216-SM 0.1 – 3.

General Description

Pad Configuration TriQuint’s TGA2216-SM is a wideband cascode amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

The cascode configuration offers exceptional wideband performance as well as supporting 40V operation.

The TGA2216-SM operates from 0.1 - 3.0GHz and provides greater than 10W of saturated output power with greater than 13dB of large signal gain and greater than 40% power-added efficiency.

Key Features

  • Frequency Range: 0.1.
  • 3.0GHz.
  • PSAT: >40dBm at PIN = 27dBm.
  • P1dB: >35dBm.
  • PAE: 50% @ midband.
  • Large Signal Gain: >13dB.
  • Small Signal Gain: 21dB.
  • Bias: VD = 40V, IDQ = 360mA, VG1 = -2.4V Typical, VG2 = +17.7V Typical.
  • Wideband Flat Gain and Power.
  • Package Dimensions: 5.0 x 5.0 x 1.45 mm QFN 5x5 mm 32L Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 3 4 RF IN 5 6 7 8 24 23 22 21 20 RF OUT 19 18 17 9 10 11 12 13 14 15 16 General Descri.

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TGA2216-SM Distributor