• Part: TGA2216-SM
  • Description: 10W GaN Power Amplifier
  • Manufacturer: TriQuint Semiconductor
  • Size: 762.19 KB
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Datasheet Summary

Applications - mercial and military radar - munications - Electronic Warfare - 3.0GHz 10W GaN Power Amplifier Product Features - Frequency Range: 0.1 - 3.0GHz - PSAT: >40dBm at PIN = 27dBm - P1dB: >35dBm - PAE: 50% @ midband - Large Signal Gain: >13dB - Small Signal Gain: 21dB - Bias: VD = 40V, IDQ = 360mA, VG1 = -2.4V Typical, VG2 = +17.7V Typical - Wideband Flat Gain and Power - Package Dimensions: 5.0 x 5.0 x 1.45 mm QFN 5x5 mm 32L Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 3 4 RF IN 5 6 7 8 24 23 22 21 20 RF OUT 19 18 17 9 10 11 12 13 14 15 16 General Description Pad Configuration TriQuint’s TGA2216-SM is a wideband cascode amplifier fabricated...