Click to expand full text
Advance Product Information
300um Discrete pHEMT TGF4350-EPU
Key Features and Performance
• 0.25um pHEMT Technology • DC 22 GHz Frequency Range • 1.2 dB NF, 14.5 dB Associated
Gain at 10 GHz, 3V Operation • Floating Source Configuration • Chip Dimensions 0.5080 mm x
0.4064 mm
Primary Applications
• Low Noise amplifiers
17 F = 10 GHz Vd = 3 V
15 Iq = 15 mA
13
80 70 60
Power Added Efficiency-
Output Power-dBm, Gain-d
11 50
9 40
7 30
5
3
1 -12 -8
-4 0 4 Input Power - dBm
Pout (dBm) Gain (dB) PAE (%)
8
20
10
0 12
2.4 16 F = 10 GHz
2.2 15
2.0 14
1.8 13
Associated Gain - dB
Noise Figure - dB
1.6 12
1.4 11
1.2 10
1.0
0.8
0.6
0.
TGF4350-EPU Datasheet
