Datasheet4U Logo Datasheet4U.com

TSD60R850S1 - N-Channel MOSFET

Features

  • Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.
  • 650V @TJ = 150 ℃.

📥 Download Datasheet

Datasheet Details

Part number TSD60R850S1
Manufacturer Truesemi
File Size 695.09 KB
Description N-Channel MOSFET
Datasheet download datasheet TSD60R850S1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TSD635 Asymmetrical Thyristor SGS-Thomson Microelectronics
TSD-1251 2.25 Watt SIP DC/DC Converters Premier Magnetics
TSD-515 2.25 Watt SIP DC/DC Converters Premier Magnetics
TSD0033-728WT Two Terminals Schottky Barrier Diode TAITRON
TSD035 Asymmetrical Thyristor SGS-Thomson Microelectronics

Other Datasheets by Truesemi

Part Number Description
TSD60R2K3S1 N-Channel MOSFET
TSD60R380S1 N-Channel MOSFET
TSD60R460S1 N-Channel MOSFET
TSD60R580WT N-Channel MOSFET
TSD60R650S1 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSD60R850S1/TSU60R850S1 600V 5A N-Channel SJ-MOSFET TSD60R850S1/TSU60R850S1 600V 5A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.77Ω • Ultra Low gate charge (typ.
Published: |