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TSD630M Datasheet N-channel MOSFET

Manufacturer: Truesemi

Overview: TSD630M/TSU630M TSD630M/TSU630M 200V N-Channel MOSFET General.

Datasheet Details

Part number TSD630M
Manufacturer Truesemi
File Size 404.72 KB
Description N-Channel MOSFET
Datasheet TSD630M-Truesemi.pdf

General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • 7.8A,200V,Max. RDS(on)=0.4 Ω @ VGS =10V.
  • Low gate charge(typical 20nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanc.

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