Datasheet Details
| Part number | TSF4N60M |
|---|---|
| Manufacturer | Truesemi |
| File Size | 669.92 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 TSF4N60M Datasheet
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Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- 4.0A,600V,Max. RDS(on)=2.5 Ω @ VGS =10V.
- Low gate charge(typical 16nC).
- High ruggedness.
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanc.