TSP4N60M
TSP4N60M is N-Channel MOSFET manufactured by Truesemi.
Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 4.0A,600V,Max.RDS(on)=2.5 Ω @ VGS =10V
- Low gate charge(typical 16n C)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
IDM EAS EAR dv/dt
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche...
