Click to expand full text
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2304
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.055 @ V GS = 10 V 0.080 @ VGS = 4.5 V
ID (A)
2.5 2.0
(SOT-23)
G1 S2
3D
Top View TF2304 (A4)*
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C TA= 70_C
TA= 25_C TA= 70_C
VDS VGS
ID
IDM IS
PD
TJ, Tstg
30 "12 2.5 2.0 10 1.25 1.25 0.80 –55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc
RthJA
Notes a.