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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2309 P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 60 0.340 at VGS = - 10 V 0.550 at VGS = - 4.5 V
ID (A) - 1.25
-1
Pb-free Available
RoHS*
COMPLIANT
(SOT-23)
G1 S2
3D
Top View
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
ID
Pulsed Drain Current Avalanche Current
L = 0.1 mH
IDM IAS
Maximum Power Dissipationa, b
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit - 60 ± 20
- 1.25 -8 -5
1.25
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Leada
Notes: a.
TF2309 Datasheet
