Datasheet Details
| Part number | TF2310 |
|---|---|
| Manufacturer | Tuofeng Semiconductor |
| File Size | 236.33 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | TF2310 Download (PDF) |
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| Part number | TF2310 |
|---|---|
| Manufacturer | Tuofeng Semiconductor |
| File Size | 236.33 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | TF2310 Download (PDF) |
|
|
|
SOT-23 G S The MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial applications.
BVDSS RDS(ON) ID 60V 90mΩ 3A D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current3, VGS @ 4.5V IDM PD@TA=25℃ TSTG TJ Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 60 ±20 3 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A W W/℃ ℃ ℃ Max.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device.
| Part Number | Description |
|---|---|
| TF2312 | MOSFET |
| TF2314 | N-Channel MOSFET |
| TF2315 | MOSFET |
| TF2319 | P-Channel MOSFET |
| TF2300 | N-Channel Enhancement Mode Field Effect Transistor |
| TF2301 | P-Channel MOSFET |
| TF2301A | P-Channel MOSFET |
| TF2302 | N-Channel MOSFET |
| TF2302A | N-Channel MOSFET |
| TF2303 | P-Channel MOSFET |