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TF2310 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23 package is universally used for all commercial-industrial applications.

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Datasheet Details

Part number TF2310
Manufacturer Tuofeng Semiconductor
File Size 236.33 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet TF2310 Datasheet

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Full PDF Text Transcription

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device D Description SOT-23 G S The MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. BVDSS RDS(ON) ID 60V 90mΩ 3A D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current3, VGS @ 4.
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