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RF MOSFET 2 - 175 MHz
Features
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Power
Transistor,
5W, 28V
DU2805S
v2.00
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating 65 20 I Units
Drain-SourceVoltage Gate-Source Voltage Drain-Source Current Power Dissipation JunctionTemperature ( Storage Temperature Thermal Resistance I I
VOS V0s ‘05 PO T, TSTG 0JC I
V
v
1.4
15.8 200
I
* W
“C
I
1 -55to+150 11.1
I
“C “C/w
I
Electrical Characteristics
at 25°C
Specifications
Subject to Change Without Notlce.
M/A-COM,
North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel.
DU2805S Datasheet
