MAAPGM0060-DIE Datasheet Text
..
Amplifier, Power, 5W 4.8-6.7 GHz
Features
- 5 Watt Saturated Output Power Level
- Variable Drain Voltage (6-10V) Operation
- MSAG Process
MAAPGM0060-DIE
903186
- Preliminary Information
Description
The MAAPGM0060-DIE is a 2-stage, 5 W power amplifier with on-chip bias networks. This produ ct is fully match ed to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance pliance. The part is fabricated using M/A-’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG) Process. This process provides polyimide scratch protection.
Primary Applications
- Point-to-Point Radio
- Sat
- Broadband Wireless Access
Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, Idq ≈ 1.8A2, Pin = 20 dBm, Rg = 100 Ω
Parameter Bandwidth Output Power Power Added Efficiency 1-dB pression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current 1. 2. TB = MMIC Base Temperature Adjust VGG between
- 2.6 and
- 1.5V to achieve specified Idq. Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD Typical 4.8-6.7 37 29 37 18 3.0:1 1.5:1 < 4 < 2.5 mA A Units GHz dBm % dBm dB
1
M/A- Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A- makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A- assume any liability whatsoever arising out of the use or application of any product(s) or information.
- North America Tel: 800.366.2266 / Fax: 978.366.2266
- Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
- Asia/Pacific Tel:...