MAAPGM0064-DIE Datasheet | Tyco Electronics

.. RoHS pliant MAAPGM0064-DIE Rev - Preliminary Information Amplifier, Power, 2.0 W 6.5- 9.5 GHz Features - - - - 2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG™ Process High Performance Ceramic Bolt Down Package Description The MAAPGM0064-DIE is a 2-stage 2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance pliance. The part is fabricated using M/A-’s GaAs Multifunction SelfAligned Gate Process. M/A-’s MSAG™ process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications - - - Multiple Band Point-to-Point Radio Sat ISM Band Also Available in: Description Part Number Ceramic Package MAAPGM0064 1 SAMPLES Sample Board (Die) MAAP-000064-SMB004 2 Mechanical Sample (Die) Not Available Electrical Characteristics: TB = 40°C , Z0 = 50 Ω, VDD = 8V, IDQ ≈ 600 mA , Pin = 18 dBm, RG ≈ 120Ω Parameter Bandwidth Output Power Power Added Efficiency 1-dB pression Point Small Signal Gain Input VSWR Output VSWR Gate Supply Current Drain Supply Current Noise Figure 2 nd rd Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD NF 2f 3f OTOI IM3 IM5 Typical 6.5-9.5 34.5 30 32 20 1.8:1 3.0:1 <5 <1 9.5 -20 -45 41 -10 -25 Units GHz dBm % dBm dB mA mA dB dBc dBc dBm dBm dBm...