MAAPGM0060 Datasheet | Tyco Electronics

.. RO-P-DS-3090 - Preliminary Information 4.8-6.7 GHz 5W Power Amplifier MAAPGM0060 MAAPGM0060 Features - 5 Watt Saturated Output Power Level - Variable Drain Voltage (6-10V) Operation - GaAS MSAG™ MESFET Process Primary Applications - - - APGM0060 YWWLLLL Point-to-Point Radio Sat UNII and ISM Band Description The MAAPGM0060 is a 2-stage 5 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance pliance. The part is fabricated using M/A-’s GaAs Multifunction Self-Aligned Gate MESFET Process. M/A-’s MSAG™ process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection VGG RF IN VGG No Connection VDD1 VDD2 RF OUT VDD2 VDD1 Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 25.0 +12.0 -3.0 3 27 180 -55 to +150 Units dBm V V A W °C °C 1. Operation outside of these ranges may reduce product reliability. RO-P-DS-3090 - 2/5 4.8-6.7 GHz 5W Power Amplifier Remended Operating Conditions Characteristic Drain Supply Voltage...