MAAPGM0064 Datasheet | Tyco Electronics

.. Amplifier, Power, 2.0 W 6.5- 9.5 GHz Features - - - - 903261 - Preliminary Information MAAPGM0064 2 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG™ Process High Performance Ceramic Bolt Down Package Primary Applications - - - APGM0064 YWWXXX Multiple Band Point-to-Point Radio Sat ISM Band Description The MAAPGM0064 is a 2-stage 2 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance pliance. The part is fabricated using M/A-’s GaAs Multifunction SelfAligned Gate Process. M/A-’s MSAG™ process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Pin Number 1 2 3 4 5 6 7 8 9 10 RF Designator No Connection VGG RF IN VGG No Connection No Connection VDD RF OUT VDD No Connection Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% Idss) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 23.0 +12.0 -3.0 950 7.9 180 -55 to +150 Units dBm V V mA W °C °C 1. Operation outside of these ranges may reduce product reliability. 1 M/A- Inc. and its affiliates reserve the right to make changes to the...