MAAPGM0066-DIE Datasheet | Tyco Electronics

.. Amplifier, Power, 2 W 2.5-6.0 GHz Features - 2.5 Watt Saturated Output Power Level - Variable Drain Voltage (4-10V) Operation - MSAG ® Process Rev C Preliminary Datasheet Description The MAAPGM0066-DIE is a 3-stage 2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-’s repeatable, high performance and highly reliable Ga As Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance pliance. M/A-’s MSAG™ process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications - - - - Point-to-Point Radios Point-to-Multipoint Radios Sat Broadband Wireless Access Mechanical Sample (Die) MAAP-000066-MCH000 Also Available in: Description Part Number Plastic MAAP-000066-PKG003 Sample Board (Die) MAAP-000066-SMB004 SAMPLES Electrical Characteristics: T B = 30°C1, Z0 = 50Ω , VDD = 8V, IDQ = 650m A2, Pin = 6 d Bm Parameter Bandwidth Output Power 1-d B pression Point Small Signal Gain Power Added Efficiency Input VSWR Output VSWR Output Third Order Intercept Output Third Order Intermod, Pout = 26 d Bm (DCL) Gate Current Drain Current 1. 2. Symbol f POUT P1d B G PAE VSWR VSWR TOI IMD3 IGG IDD Typical 2.5-6.0 33.5 33.3 33.5 35 1.4:1 2.4:1 42 40 10 810 d Bm d Bc m A m A Units GHz d Bm d Bm d B % TB = MMIC Base Temperature Adjust VGG between - 2.6 and - 1.2V to achieve specified Idq. M/A- Inc. and its affiliates...