MAAPGM0068-DIE Datasheet | Tyco Electronics

.. Amplifier, Power, 1.2W 5.7-8.5 GHz Features - 1.5 Watt Saturated Output Power Level - Variable Drain Voltage (6-10V) Operation ® - MSAG Process Rev B Preliminary Datasheet Description The MAAPGM0068-DIE is a 3-stage 1.2W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-’s repeatable, high performance and highly reliable Ga As Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance pliance. M/A-’s MSAG™ process Features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications - Point-to-Point Radio ◊ 6, 7, and 8 GHz Bands - Sat - Broadband Wireless Access Also Available in: Description Part Number Ceramic MAAPGM0068 Sample Board (Die) MAAP-000068-SMB004 SAMPLES Mechanical Sample (Die) MAAP-000068-MCH000 Electrical Characteristics: TB = 25°C1, Z0 = 50 Ω, VDD = 8V, IDQ = 320 m A2, Pin = 8 d Bm, RG = 300 Ω Parameter Bandwidth Output Power 1-d B pression Point Small Signal Gain Power Added Efficiency Input VSWR Output VSWR Output Third Order Intercept Output Third Order Intermod, Pout = 24 d Bm (DCL) Gate Current Drain Current 1. 2. Symbol f POUT P1d B G PAE VSWR VSWR TOI IMD3 IGG IDD Typical 5.7-8.5 31 31 28 38 1.4:1 2.1:1 38 35 5 470 d Bm d Bc m A m A Units GHz d Bm d Bm d B % TB = MMIC Base Temperature Adjust VGG between - 2.6 and - 1.2V to achieve specified Idq. Amplifier, Power, 1.2W 5.7-8.5 GHz Maximum...