MAPLST2122-015CF Datasheet | Tyco Electronics

Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Package Style 15W Output Power at P1d B (CW) 12d B Minimum Gain at P1d B (CW) W-CDMA Typical Performance: (28VDC, -45d Bc ACPR, 5MHz offset, 4.096MHz BW) Q Output Power: 2.2W (typ.) Q Gain: 13d B (typ.) Q Efficiency: 17% (typ.) 10:1 VSWR Ruggedness (CW @ 15W, 28V, 2110MHz) Maximum Ratings Parameter Drain- Source Voltage Gate- Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 54.7 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 3.2 Unit ºC/W NOTE- CAUTION- MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 - 2170 MHz, 15W, W-CDMA 8/20/2003 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage GS = 0 Vdc, ID = 20 µAdc) OFF(V CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 Vdc, VGS (VDS DS = 65 GS = 0) Gate- Source Leakage Zero Gate Voltage Drain Current Leakage Current (VGS = = 26 5 Vdc, V 0) DS == (V Vdc, V 0) DS GS Gate Threshold Voltage Gate- Source Leakage Current (Vds = 28 Vdc, Id = 1 m A) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS (Vds = 28 Vdc, Id = 250 m A) Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) Forward Transconductance (Vgs = 10 Vdc, Id = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Reverse Transfer Capacitance DYNAMIC CHARACTERISTICS (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25ºC (In M/A- Test Fixture) (2) Two-Tone mon-Source Amplifier Power Gain (VDS = 28 Vdc,TESTS POUT = 15 WM/A- PEP. IDQ = 150 m A, FUNCTIONAL (In Test Fixture) (2) f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two-Tone Drain...