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MAPLST2122-015CF - RF Power Field Effect Transistor

Features

  • Designed for W-CDMA base station.

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Full PDF Text Transcription

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www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 15W, 28V 8/20/03 Preliminary MAPLST2122-015CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Q Q Q Package Style 15W Output Power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dBc ACPR, 5MHz offset, 4.096MHz BW) Q Output Power: 2.2W (typ.) Q Gain: 13dB (typ.) Q Efficiency: 17% (typ.) 10:1 VSWR Ruggedness (CW @ 15W, 28V, 2110MHz) MAPLST2122-015CF Q Maximum Ratings Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 54.
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