MAPLST2122-060CF Datasheet | Tyco Electronics

Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Package Style 60W output power at P1d B (CW) 12d B Minimum Gain at P1d B (CW) W-CDMA Typical Performance: (28VDC, -45d B ACPR @ 4.096MHz) Q Output Power: 7.5W (typ.) Q Gain: 12d B (typ.) Q Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz) Maximum Ratings Parameter Drain- Source Voltage Gate- Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 175 -40 to +150 +200 Units Vdc Vdc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 1.0 Unit ºC/W NOTE- CAUTION- MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 - 2170 MHz, 60W, 28V 4/6/2005 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage (V GS = 0 Vdc, ID = 20 µAdc) OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS 65 Vdc, VGS DS = 28 GS = 0) Gate- Source Leakage Zero Gate Voltage Drain Current Leakage Current (V Vdc, VV 0) DS = = (VGS = =5 26 Vdc, 0) DS GS Symbol Min Typ Max Unit Symbol V(BR)DSS IDSS IDSS IGSS IDSS VGS(th) IGSS VDS(Q) VDS(on) Gm Min 65 - - - - 2 - 2 - - Typ - - - - - - - - 0.4 2.4 Max - 1 10 11 1 4 Unit Vdc µAdc µAdc µAdc µAdc Vdc µAdc Vdc Vdc S Gate Threshold Voltage Gate- Source Leakage Current (VDS = 10 Vdc, ID = 1 m A) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON (V CHARACTERISTICS DS = 28 Vdc, ID = 500 m A) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Input Capacitance (Including Input Matching DYNAMIC CHARACTERISTICS (1) Capacitor in Package) (VDS = 28 Vdc, VGS = 0, f = 1...