MAPLST2122-090CF Datasheet | Tyco Electronics

Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, W-CDMA and multicarrier power amplifier applications. 90W Output Power at P1d B (CW) 11d B Minimum Gain at P1d B (CW) W-CDMA Typical Performance: (28VDC, -45d B ACPR @ 4.096MHz) Q Output Power: 12W (typ.) Q Gain: 12d B (typ.) Q Efficiency: 16% (typ.) 10:1 VSWR Ruggedness (CW @ 60W, 28V, 2110MHz) Maximum Ratings Parameter Drain- Source Voltage Gate- Source Voltage Drain Current - Continuous Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS ID PD TSTG TJ Rating 65 20 20 206 -40 to +150 +200 Units Vdc Vdc Adc W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 0.85 Unit ºC/W NOTE- CAUTION- MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 - 2170 MHz, 90W, 28V 4/6/2005 Preliminary Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage GS = 0 Vdc, ID = 100 µAdc) OFF(V CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 Vdc, VGS (VDS DS = 65 GS = 0) Gate- Source Leakage Zero Gate Voltage Drain Current Leakage Current (VGS = = 26 5 Vdc, V 0) DS == (V Vdc, V 0) DS GS Gate Threshold Voltage Gate- Source Leakage Current (VDS = 10 Vdc, ID = 60 m A) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS (VDS = 28 Vdc, ID = 750 m A) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Output Capacitance DYNAMIC CHARACTERISTICS (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS TESTS @ 25ºC (In M/A- Fixture) FUNCTIONAL (In M/A- Test Test Fixture) (2) Two-Tone mon-Source Amplifier Power Gain (VDS = 28 Vdc, POUT...