Datasheet4U Logo Datasheet4U.com

PHI920-33 - Wireless Bipolar Power Transistor/ 33W 1930 - 1990 MHz

Key Features

  • NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System PHI 920-33 v2.01 Absolute’fiaximum Parameter Collector-EmitterVoltage Collector-Emitter Emitter-Base Voltage Ratings at 25°C 1 Symbol V CEO V ES V ES0 L PO T s-r0 TJ eJC 1 Rating 25 65 3.0 4.7 91 -55 to +150 200 1.6 Units V V ,181 (4.60)+.010 (0.25) 225 (5.72)a.015 (0.38) BASE 220 I-(5.59) , II Voltage V A w “C “C “CIW.

📥 Download Datasheet

Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PHI920-45 Wireless Bipolar Power Transistor/ 45W 1930 - 1990 MHz
PHI214-0851 Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
PHI214-20EL Radar Pulsed Power Transistor/ 2OW/ 2ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25L Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25S Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-30EL Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
PHI214-6M Radar Pulsed Power Transistor/ SW/ looms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI516160 Wireless Bipolar Power Transistor/ 60W 1450 - 1550 MHz
PHI617-30 Wireless Bipolar Power Transistor/ 30W 1.6 - 1.7 GHz

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System PHI 920-33 v2.01 Absolute’fiaximum Parameter Collector-EmitterVoltage Collector-Emitter Emitter-Base Voltage Ratings at 25°C 1 Symbol V CEO V ES V ES0 L PO T s-r0 TJ eJC 1 Rating 25 65 3.0 4.7 91 -55 to +150 200 1.6 Units V V ,181 (4.60)+.010 (0.25) 225 (5.72)a.015 (0.38) BASE 220 I-(5.59) , II Voltage V A w “C “C “CIW .4~~r?:-ll(o.03~ CollectorCurrent Power Dissipation StorageTemperature JunctionTemperature Thermal Resistance I .087 (2.21)*.010 (0.25) I I 1 II t UNLESS OTHERWISE NOTED, TOLERANCES ARE INCHES r.