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Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz
Features
NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System
PHI 920-33
v2.01
Absolute’fiaximum
Parameter Collector-EmitterVoltage Collector-Emitter Emitter-Base Voltage
Ratings at 25°C
1 Symbol V CEO V ES V ES0 L PO T s-r0 TJ eJC 1 Rating 25 65 3.0 4.7 91 -55 to +150 200 1.6 Units V V
,181 (4.60)+.010 (0.25) 225 (5.72)a.015 (0.38) BASE
220 I-(5.59) , II
Voltage
V A w “C “C “CIW
.4~~r?:-ll(o.03~
CollectorCurrent Power Dissipation StorageTemperature JunctionTemperature Thermal Resistance
I
.087 (2.21)*.010 (0.25)
I
I
1
II
t
UNLESS OTHERWISE NOTED, TOLERANCES ARE INCHES r.