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PHI920-45 - Wireless Bipolar Power Transistor/ 45W 1930 - 1990 MHz

Key Features

  • NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System PHI 920-45 Matching Absbiute Maximum Ratings at 25°C Parameter Collector-EmitterVoltage 1 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation I Symbol VCEO 1 V,,, VEBO ‘c P, Y T, T ST0 e. lc I Rating 20 1 65 3.0 5.5 100 200 -65 to +200 1.3 1 Units V ) V V A w ) “C “C “CNV UVLESS C-HE?WISE NOTED, TOLERANCfS ARE.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PHI920-33 Wireless Bipolar Power Transistor/ 33W 1930 - 1990 MHz
PHI214-0851 Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
PHI214-20EL Radar Pulsed Power Transistor/ 2OW/ 2ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25L Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25S Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-30EL Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
PHI214-6M Radar Pulsed Power Transistor/ SW/ looms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI516160 Wireless Bipolar Power Transistor/ 60W 1450 - 1550 MHz
PHI617-30 Wireless Bipolar Power Transistor/ 30W 1.6 - 1.7 GHz

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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* =g = ----= -A = = -r -an AMP company SE z--z Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System PHI 920-45 Matching Absbiute Maximum Ratings at 25°C Parameter Collector-EmitterVoltage 1 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation I Symbol VCEO 1 V,,, VEBO ‘c P, Y T, T ST0 e.lc I Rating 20 1 65 3.0 5.5 100 200 -65 to +200 1.3 1 Units V ) V V A w ) “C “C “CNV UVLESS C-HE?WISE NOTED, TOLERANCfS ARE ) JunctionTemperature StorageTemperature Thermal Resistance 1 :1.52* INC-iES :MILLIM:TZRS .050’.002 -! I 05) i.005’ Z.