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Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz
Features
NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System
PHI 920-45
Matching
Absbiute Maximum Ratings at 25°C
Parameter Collector-EmitterVoltage 1 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation
I
Symbol VCEO 1 V,,, VEBO ‘c P, Y T, T ST0 e.lc
I
Rating 20 1 65 3.0 5.5 100 200 -65 to +200 1.3
1
Units V ) V V A w ) “C “C “CNV
UVLESS C-HE?WISE NOTED, TOLERANCfS ARE
)
JunctionTemperature StorageTemperature Thermal Resistance
1
:1.52* INC-iES :MILLIM:TZRS
.050’.002 -! I
05) i.005’ Z.
PHI920-45 Datasheet
