Full PDF Text Transcription for P1604ET (Reference)
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P1604ET. For precise diagrams, and layout, please refer to the original PDF.
P1604ET P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -10V ID -65A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Note...
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-65A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM -65 -42 -120 Avalanche Current IAS -46 Avalanche Energy L = 0.1 mH EAS 107 Power Dissipation TC = 25 °C PD 104 TC = 100 °C 41 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
P1604ET Datasheet
