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P1604ET
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
16mΩ @VGS = -10V
ID -65A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
-40
Gate-Source Voltage
VGS
±20
Continuous Drain Current2 Pulsed Drain Current1,2
TC = 25 °C TC = 100 °C
ID
IDM
-65 -42 -120
Avalanche Current
IAS
-46
Avalanche Energy
L = 0.1 mH
EAS
107
Power Dissipation
TC = 25 °C
PD
104
TC = 100 °C
41
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.