Full PDF Text Transcription for P1604ETF (Reference)
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P1604ETF. For precise diagrams, and layout, please refer to the original PDF.
P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -10V ID -40A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise No...
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-40A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -40 -25 -120 Avalanche Current IAS -40 Avalanche Energy L = 0.1mH EAS 78 Power Dissipation TC = 25 °C PD 42 TC = 100 °C 17 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA TYPICAL MAXIMUM UN
P1604ETF Datasheet
