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P2003NV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 20mΩ @VGS =10V
-30V
25mΩ @VGS = -10V
ID 8.8A -8A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70°C
N 8.8 P -8 ID N 7 P -6.4
Pulsed Drain Current1
N 35 IDM P -32
Avalanche Current
N 27 IAS P -28
Avalanche Energy
L = 0.1mH
N 38 EAS P 39
Power Dissipation
TA = 25 °C TA = 70 °C
N 2.5
P PD
N 1.6
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.
P2003NV Datasheet
