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P2502IZG
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 22mΩ @VGS = 4.5V
ID 6.3A
TSSOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current2 Pulsed Drain Current1
TA= 25 °C TA = 70 °C
ID IDM
6.3 5 50
Avalanche Current
IAS 22
Avalanche Energy
L = 0.1mH
EAS
23
Power Dissipation
TA = 25 °C TA= 70 °C
PD
1.4 0.9
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
90
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
P2502IZG Datasheet
