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P2803BMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 28mΩ @VGS = 10V
ID 6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
VGS ID IDM
±20 6 4 30
Avalanche Current Avalanche Energy
Power Dissipation
L = 0.1mH TA = 25 °C TA = 70 °C
IAS EAS
PD
21 22 1 0.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient(Steady-State) 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 125 °C / W
Ver 1.
P2803BMG Datasheet
