P2806AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 30mΩ @VGS = 10V
ID 34A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
34 21 110
Avalanche Current
IAS 29
Avalanche Energy
L = 0.1m H
Power Dissipation
TC = 25 °C TC = 100 °C
58 23
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL
Rq JC Rq JA
TYPICAL
MAXIMUM
2.15 62.5
UNITS °C /...
