P2806ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V
30mΩ @VGS = 10V
27A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1m H
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL Rq JC Rq...
