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P2806HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 28mΩ @VGS = 10V
ID 6A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
6 5 30
Avalanche Current
IAS 30
Avalanche Energy
L = 0.1mH
EAS
44
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.28
Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient Junction-to-Lead 1Pulse width limited by maximum junction temperature.
P2806HV Datasheet
