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P2806BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 28mΩ @VGS = 10V
ID 7A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
7 5 35
Avalanche Current
IAS 28
Avalanche Energy
L =0.1mH
EAS
41
Power Dissipation
TA= 25 °C TA =70 °C
PD
2.5 1.6
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL MAXIMUM UNITS 50 °C / W
REV 1.
P2806BV Datasheet
