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PE532DY
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 19mΩ @VGS = 10V
ID3 21A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
21
Continuous Drain Current3
TC = 100 °C TA = 25 °C
ID
13 7.5
Pulsed Drain Current1
TA= 70 °C
IDM
6 25
Avalanche Current
IAS 17
Avalanche Energy
L =0.1mH
EAS
15
TC = 25 °C
14
Power Dissipation
TC = 100 °C TA = 25 °C
PD
5 1.7
TA = 70 °C
1.1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
70
Junction-to-Case
RqJC
8.
PE532DY Datasheet
