PE537BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
8.5mΩ @VGS = -10V
ID -33A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
TC = 25 °C
-33
Continuous Drain Current3
TC = 100 °C TA = 25 °C
ID
-22 -12
Pulsed Drain Current1
TA= 70 °C
IDM
-9.6 -100
Avalanche Current
IAS -34
Avalanche Energy
L =0.1mH
EAS
57.8
TC = 25 °C
16.7
Power Dissipation
TC = 100 °C TA = 25 °C
PD
6.7 2
TA = 70 °C
1.
PE537BA Datasheet
