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PE534SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7.5mΩ @VGS = 10V
ID 52A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
52
Continuous Drain Current3
Tc = 100 °C TA = 25 °C
ID
33 14
Pulsed Drain Current1
TA= 70 °C
IDM
11 100
Avalanche Current
IAS 22
Avalanche Energy
L =0.1mH
EAS
24
TC = 25 °C
36
Power Dissipation
TC = 100 °C TA = 25 °C
PD
14 2.5
TA = 70 °C
1.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
50
Junction-to-Case
RqJC
3.
PE534SA Datasheet
