PE534BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID 31A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
31
Continuous Drain Current2
Tc = 100 °C TA = 25 °C
ID
20 10
Pulsed Drain Current1
TA= 70 °C
IDM
8 50
Avalanche Current
IAS 24.5
Avalanche Energy
L =0.1mH
EAS
30
TC = 25 °C
15
Power Dissipation
TC = 100 °C TA = 25 °C
PD
6 1.
PE534BA Datasheet
