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PE551BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -22A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS -30 VGS ±25
TC = 25 °C
-22
Continuous Drain Current3
Pulsed Drain Current1 Avalanche Current Avalanche Energy
TC = 100 °C TA = 25 °C TA = 70 °C
L = 0.1mH
ID
IDM IAS EAS
-14 -7 -5.8 -40 -23 26
TC = 25 °C
17
Power Dissipation Junction & Storage Temperature Range
TC = 100 °C TA = 25 °C TA = 70 °C
PD TJ, TSTG
7 1.9 1.2 -55 to 150
UNITS V
A
mJ W °C
REV1.
PE551BA Datasheet
