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PK601CA
N & P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS -30V
RDS(ON) 28mΩ @VGS = -10V
30V 22mΩ @VGS = 10V
ID CH. -22A Q2 23A Q1
PDFN 5*6P
100% UIS Tested 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH. LIMITS
Drain-Source Voltage
Q2 VDS
Q1
-30 30
Gate-Source Voltage
Q2 VGS
Q1
±20 ±20
Continuous Drain Current3
TC = 25 °C TC = 100 °C
Q2 -22 Q1 23 ID Q2 -14 Q1 14
Pulsed Drain Current1
Q2 -45
IDM Q1
50
Continuous Drain Current
TA = 25 °C TA = 70 °C
Q2 -7.8 Q1 8.6 ID Q2 -6.3 Q1 6.9
Avalanche Current
Q2 -19
IAS Q1
12
Avalanche Energy
L = 0.1mH
Q2 EAS
Q1
18 7.3
Power Dissipation
TC = 25 °C TC = 100 °C
Q2 Q1 PD Q2 Q1
25 22 10 9
UNITS V
A
mJ W
REV 1.
PK601CA Datasheet
